SIC MOSFET
SIC MOSFET SIC DIODE HV SJ MOS MV MOSFET

SIC MOSFET

SiC MOSFET是Faster菲速半导体公司先进的碳化硅MOSFET系列产品。
这项技术具备极低的开关损耗、低FOM （ QG x RDS(ON ）、体二极管无反向恢复损耗以及高耐用性等特点。
该SiC MOSFET为实现高系统效率提供了设计灵活性，能以更高的开关频率在提升可靠性的同时减小系统尺寸。

主要特点

极低的开关损耗 低FOM；QG x RDS（开启） 快速本征二极管 强大的雪崩能力 无铅、无卤素、符合RoHS标准
产品
数据表
产品状态
资格认证
包装类型
技术
VDS 最大值
RDS(on) 类型
VGS(th) 最大值
ID @25℃ 最大值
QG(总计)
输出电容
最高结温
安装
功能
FCZN120N31M2 Active Industrial TO247-4L Notch eSiC M2 1200 V 31 mΩ 4.5 V 90.0 A 111 nC 170 pF 175 ℃ Through Hole High Performance
FCR120N40M2A Active Automotive TSPAK-LF eSiC M2 1200V 40 mΩ 4.5 V 57 A 62 nC 105 pF 175°C Surface Mount High Performance
FCRZ120N40M2A Active Automotive TSPAK-DBC eSiC M2 1200V 40 mΩ 4.5 V 57.0 A 62 nC 105 pF 175°C Surface Mount High Performance
FCZ120N16M2 Active Industrial TO247 4L eSiC M2 1200 V 16 mΩ 4.5 V 118 A 152 nC 227 pF 175 ℃ Through Hole High Performance
FCT65N27M1 Active Industrial TOLL eSiC M1 650 V 27 mΩ 4.5 V 84 A 91 nC 207 pF 175 ℃ Surface Mount High Performance
FCZ65N45M1 Active Industrial TO247 4L eSiC M1 650 V 45 mΩ 4.5 V 44 A 56 nC 131 pF 175 ℃ Through Hole High Performance
FCW65N45M1 Active Industrial TO247 3L eSiC M1 650 V 45 mΩ 4.5 V 44 A 56 nC 131 pF 175 ℃ Through Hole High Performance
FCZ65N27M1 Active Industrial TO247 4L eSiC M1 650 V 27 mΩ 4.5 V 75 A 91 nC 207 pF 175 ℃ Through Hole High Performance
FCW65N27M1 Active Industrial TO247 3L eSiC M1 650 V 27 mΩ 4.5 V 75 A 91 nC 207 pF 175 ℃ Through Hole High Performance
FCBF120N80M1A Active Automotive D2PAK 7L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 50 nC 64 pF 175 ℃ Surface Mount High Performance
FCZ120N80M1A Active Automotive TO247 4L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 52 nC 64 pF 175 ℃ Through Hole High Performance
FCBF120N80M1 Active Industrial D2PAK 7L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 50 nC 64 pF 175 ℃ Surface Mount High Performance
FCZ120N80M1 Active Industrial TO247 4L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 52 nC 64 pF 175 ℃ Through Hole High Performance
FCW120N80M1 Active Industrial TO247 3L eSiC M1 1200 V 80 mΩ 4.5 V 30 A 50 nC 64 pF 175 ℃ Through Hole High Performance
FCZ120N40M1 Active Industrial TO247 4L eSiC M1 1200 V 40 mΩ 4.5 V 60 A 104 nC 124 pF 175 ℃ Through Hole High Performance
FCW120N40M1 Active Industrial TO247 3L eSiC M1 1200 V 40 mΩ 4.5 V 60 A 108 nC 124 pF 175 ℃ Through Hole High Performance
FCZ120N21M1 Active Industrial TO247 4L eSiC M1 1200 V 21 mΩ 4.5 V 100 A 198 nC 224 pF 175 ℃ Through Hole High Performance
FCW120N21M1 Active Industrial TO247 3L eSiC M1 1200 V 21 mΩ 4.5 V 100 A 200 nC 224 pF 175 ℃ Through Hole High Performance
FCZ120N40M2 Active Industrial TO247 4L eSiC M2 1200 V 40 mΩ 4.5 V 57 A 62 nC 105 pF 175 ℃ Through Hole High Performance

SIC MOSFET _ 产品订购